Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure

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Authors: M. Fatima Romero, Alberto Bosca, Jorge Pedros, Javier Martinez, Rajveer Fandan, Tomas Palacios, Fernando Calle

Journal title: IEEE Electron Device Letters

Journal number: 38/10

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2017

Published pages: 1441-1444

DOI identifier: 10.1109/LED.2017.2747500

ISSN: 0741-3106