Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer

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Authors: M. Rio Calvo, J-B. Rodriguez, L. Cerutti, M. Ramonda, G. Patriarche, E. Tournié

Journal title: Journal of Crystal Growth

Journal publisher: Elsevier BV

Published year: 2019

Published pages: 125299

DOI identifier: 10.1016/j.jcrysgro.2019.125299

ISSN: 0022-0248