Statistical Characterization and Modelling of Gate-Induced Drain Leakage Variability in Advanced FDSOI Devices

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Authors: T. A. Karatsori, C. Cavalcante, J. Lacord, P. Batude, C. Theodorou, G. Ghibaudo

Journal title: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Journal publisher: IEEE

Published year: 2019

Published pages: 1-2

DOI identifier: 10.1109/s3s46989.2019.9320739

ISBN: 978-1-7281-3523-6