Resistive switching in a LaMnO 3 + δ /TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy

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Authors: Benjamin Meunier, Eugénie Martinez, Raquel Rodriguez-Lamas, Dolors Pla, Mònica Burriel, Michel Boudard, Carmen Jiménez, Jean-Pascal Rueff, Olivier Renault

Journal title: Journal of Applied Physics

Journal number: 126/22

Journal publisher: American Institute of Physics

Published year: 2019

Published pages: 225302

DOI identifier: 10.1063/1.5125420

ISSN: 0021-8979