Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation

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Authors: Felix Predan, Dirk Reinwand, Romain Cariou, Markus Niemeyer, Frank Dimroth

Journal title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Journal number: 34/3

Journal publisher: American Institute of Physics

Published year: 2016

Published pages: 031103

DOI identifier: 10.1116/1.4947118

ISSN: 0734-2101