Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors

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Authors: Y. Hernandez-Barrios, F. Avila, M. Estrada, A. Cerdeira, O. Moldovan, B. Iniguez, R. Picos

Journal title: 2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

Journal publisher: IEEE

Published year: 2016

Published pages: 1-4

DOI identifier: 10.1109/ICEEE.2016.7751186

ISBN: 978-1-5090-3511-3