The impact of post-deposition annealing on the performance of solution-processed single layer In 2 O 3 and isotype In 2 O 3 /ZnO heterojunction transistors

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Authors: Kornelius Tetzner, Ivan Isakov, Anna Regoutz, David J. Payne, Thomas D. Anthopoulos

Journal title: J. Mater. Chem. C

Journal number: 5/1

Journal publisher: Royal Society of Chemistry

Published year: 2017

Published pages: 59-64

DOI identifier: 10.1039/C6TC04907A

ISSN: 2050-7534