Highly stable amorphous zinc tin oxynitride thin film transistors under positive bias stress

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Authors: K. M. Niang, B. C. Bayer, J. C. Meyer, A. J. Flewitt

Journal title: Applied Physics Letters

Journal number: 111/12

Journal publisher: American Institute of Physics

Published year: 2017

Published pages: 122109

DOI identifier: 10.1063/1.5004514

ISSN: 0003-6951