Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices

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Authors: Eduardo Pérez, Christian Wenger, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Robin Roelofs

Journal title: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Journal number: 35/1

Journal publisher: AVS Science and Technology Society

Published year: 2017

Published pages: 01A103

DOI identifier: 10.1116/1.4967308

ISSN: 2166-2754