Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in In x Ga 1-x N/In 0.02 Ga 0.98 N superlattices

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: P. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, M. Albrecht, M. Siekacz, C. Skierbiszewski

Journal title: Journal of Applied Physics

Journal number: 124/6

Journal publisher: American Institute of Physics

Published year: 2018

Published pages: 065701

DOI identifier: 10.1063/1.5032287

ISSN: 0021-8979