3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

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Authors: C. Navarro, L. Donetti, J.L. Padilla, C. Medina-Bailon, J.C. Galdon, C. Marquez, C. Sampedro, F. Gamiz

Journal title: Solid-State Electronics

Journal number: Volume 200, February 2023, 108577

Journal publisher: Pergamon Press Ltd.

Published year: 2023

DOI identifier: 10.1016/j.sse.2022.108577

ISSN: 0038-1101