The effect of a Ta oxygen scavenger layer on HfO 2 -based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport

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Authors: Xiaoliang Zhong, Ivan Rungger, Peter Zapol, Hisao Nakamura, Yoshihiro Asai, Olle Heinonen

Journal title: Phys. Chem. Chem. Phys.

Journal number: 18/10

Journal publisher: Royal Society of Chemistry

Published year: 2016

Published pages: 7502-7510

DOI identifier: 10.1039/C6CP00450D

ISSN: 1463-9076