Resistive switching mechanism of GeTe–Sb 2 Te 3 interfacial phase change memory and topological properties of embedded two-dimensional states

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Authors: Hisao Nakamura, Ivan Rungger, Stefano Sanvito, Nobuki Inoue, Junji Tominaga, Yoshihiro Asai

Journal title: Nanoscale

Journal number: 9/27

Journal publisher: Royal Society of Chemistry

Published year: 2017

Published pages: 9386-9395

DOI identifier: 10.1039/C7NR03495D

ISSN: 2040-3364