Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

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Authors: A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K. D. Zeuner, K. D. Jöns, D. Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, S. Sanguinetti

Journal title: Applied Physics Letters

Journal number: 118/13

Journal publisher: American Institute of Physics

Published year: 2021

Published pages: 133102

DOI identifier: 10.1063/5.0045776

ISSN: 0003-6951