Accurate Quantum Transport Modeling of High-Speed In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunneling Diodes

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Authors: Cimbri, D. , Yavas-Aydin, B., Hartmann, F., Jabeen, F., Worschech, L., Höfling, S. and Wasige, E.

Journal title: IEEE Transactions on Electron Devices

Journal number: vol. 69, no. 8, pp. 4638-4645

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2022

DOI identifier: 10.1109/ted.2022.3178360

ISSN: 0018-9383