High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO 3 /SrZrO 3 heterostructures

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Authors: Arnaud P. Nono Tchiomo, Wolfgang Braun, Bryan P. Doyle, Wilfried Sigle, Peter van Aken, Jochen Mannhart, Prosper Ngabonziza

Journal title: APL Materials

Journal number: 7/4

Journal publisher: APL Materials

Published year: 2019

Published pages: 041119

DOI identifier: 10.1063/1.5094867

ISSN: 2166-532X