Exploiting the switching dynamics of HfO 2 -based ReRAM devices for reliable analog memristive behavior

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Authors: F. Cüppers, S. Menzel, C. Bengel, A. Hardtdegen, M. von Witzleben, U. Böttger, R. Waser, S. Hoffmann-Eifert

Journal title: APL Materials

Journal number: 7/9

Journal publisher: AIP Publishing

Published year: 2019

Published pages: 091105

DOI identifier: 10.1063/1.5108654

ISSN: 2166-532X