Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs

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Authors: Fabian Thome, Arnulf Leuther, Hermann Massler, Michael Schlechtweg, Oliver Ambacher

Journal title: 2017 IEEE MTT-S International Microwave Symposium (IMS)

Journal publisher: IEEE

Published year: 2017

Published pages: 752-755

DOI identifier: 10.1109/MWSYM.2017.8058685

ISBN: 978-1-5090-6360-4