Direct visualization of highly resistive areas in GaN by means of low-voltage scanning electron microscopy

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Authors: Jóźwik, I.; Jagielski, J.; Caban, P.; Kamiński, M.; Kentsch, U.

Journal title: Materials Science in Semiconductor Processing

Journal number: 138

Journal publisher: Pergamon Press

Published year: 2022

Published pages: 106293

DOI identifier: 10.1016/j.mssp.2021.106293

ISSN: 1369-8001