Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

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Authors: """Zhukavin, R.  Kh Kovalevsky, K. A. Pavlov, S.  G Dessmann, N. Pohl, A. Tsyplenkov, V. V. Abromisov, N. V. Riemann, H. Hübers, H. W. Shastin, V.  N"""

Journal title: Journal of Applied Physics

Journal number: 127

Journal publisher: American Institute of Physics

Published year: 2020

DOI identifier: 10.1063/1.5134691

ISSN: 0021-8979