D-band SiGe BiCMOS Power Amplifier with 16.8dBm P1dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages

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Authors: Ibrahim Petricli, Domenico Riccardi, and Andrea Mazzanti

Journal title: Microwave and Wireless Components Letters

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2020

ISSN: 1531-1309