Phonon transport unveils the prevalent point defects in GaN

Summary

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Authors: Ankita Katre, Jesús Carrete, Tao Wang, Georg K. H. Madsen, Natalio Mingo

Journal title: Physical Review Materials

Journal number: 2/5

Journal publisher: APS

Published year: 2018

DOI identifier: 10.1103/physrevmaterials.2.050602

ISSN: 2475-9953