Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtzite n -GaN:Si

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Authors: R. Adhikari, M. Matzer, A. Tarazaga Martín-Luengo, M. C. Scharber, A. Bonanni

Journal title: Physical Review B

Journal number: 94/8

Journal publisher: APS

Published year: 2016

DOI identifier: 10.1103/PhysRevB.94.085205

ISSN: 2469-9950