Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Approaches Versus TCAD For the Modeling Of Ferroelectric Transistors (FeFETs): Percolation, Steep-Subthreshold and Depolarization

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Authors: Thesberg, M., Schanovsky, F., Stanojevic, Z., Baumgartner, O. and Karner, M.

Journal title: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Journal number: 2023

Journal publisher: IEEE

Published year: 2023

DOI identifier: 10.23919/sispad57422.2023.10319645

ISBN: 978-4-86348-803-8