Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

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Authors: O. M. Korolkov, V. V. Kozlovski, A. A. Lebedev, N. Sleptsuk, J. Toompuu, T. Rang

Journal title: Semiconductors

Journal number: 53/7

Journal publisher: Izdatel'stva Nauka

Published year: 2019

Published pages: 975-978

DOI identifier: 10.1134/s1063782619070133

ISSN: 1063-7826