Resistive Random Access Memory Cells with a Bilayer TiO 2 /SiO X Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

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Authors: Na Xiao, Marco A. Villena, Bin Yuan, Shaochuan Chen, Bingru Wang, Marek Eliáš, Yuanyuan Shi, Fei Hui, Xu Jing, Andrew Scheuermann, Kechao Tang, Paul C. McIntyre, Mario Lanza

Journal title: Advanced Functional Materials

Journal number: 27/33

Journal publisher: John Wiley & Sons Ltd.

Published year: 2017

Published pages: 1700384

DOI identifier: 10.1002/adfm.201700384

ISSN: 1616-301X