Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF 2 (111) Substrates

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Authors: O. Caha, A. Dubroka, J. Humlíček, V. Holý, H. Steiner, M. Ul-Hassan, J. Sánchez-Barriga, O. Rader, T. N. Stanislavchuk, A. A. Sirenko, G. Bauer, G. Springholz

Journal title: Crystal Growth & Design

Journal number: 15287483

Journal publisher: American Chemical Society

Published year: 2013

Published pages: 3365-3373

DOI identifier: 10.1021/cg400048g

ISSN: 1528-7483