Structural and electronic properties of manganese-doped Bi 2 Te 3 epitaxial layers

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Authors: J Růžička, O Caha, V Holý, H Steiner, V Volobuiev, A Ney, G Bauer, T Duchoň, K Veltruská, I Khalakhan, V Matolín, E F Schwier, H Iwasawa, K Shimada, G Springholz

Journal title: New Journal of Physics

Journal number: 13672630

Journal publisher: Institute of Physics Publishing

Published year: 2015

Published pages: 013028

DOI identifier: 10.1088/1367-2630/17/1/013028

ISSN: 1367-2630