Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm

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Authors: Goran S. Ristic, Marko S. Andjelković, Russell Duane, Alberto J. Palma, Aleksandar B. Jakšić

Journal title: Sensors and Materials

Journal number: 33/6

Journal publisher: M Y U Scientific Publishing Division

Published year: 2021

Published pages: 2109

DOI identifier: 10.18494/sam.2021.3425

ISSN: 0914-4935