Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C

Summary

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Authors: Johannes Steiner; Jana Schultheiß; Shouzhong Wang; Peter J. Wellmann

Journal title: Crystals

Journal number: 2

Journal publisher: Multidisciplinary Digital Publishing Institute (MDPI)

Published year: 2023

DOI identifier: 10.3390/cryst13111590

ISSN: 2073-4352