Physical model of temporary current instability in ion-selective field-effect transistors with silicon oxide/nitride dielectric layers

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Authors: O.L. Kukla, A.S. Pavluchenko, S.V. Dzyadevych, V.M. Arkhypova, N.Jaffrezic-Renault

Journal title: Sensor Electronics and Мicrosystem Technologies

Journal number: 20 (3), P. 79-91 (2023)

Journal publisher: Odesa National University

Published year: 2023

Published pages: 79-91

DOI identifier: 10.18524/1815–7459.2023.3.288163

ISSN: 1815-7459