Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

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Authors: Nicolò Zagni, Manuel Fregolent, Andrea Del Fiol, Davide Favero, Francesco Bergamin, Giovanni Verzellesi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan

Journal title: Journal of Semiconductors

Journal number: 45

Journal publisher: Institute of Physics Publishing

Published year: 2024

Published pages: 032501

DOI identifier: 10.1088/1674-4926/45/3/032501

ISSN: 1674-4926