Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

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Authors: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Francesco Bergamin, Davide Favero, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Christian Huber, Matteo Meneghini, Paolo Pavan

Journal title: IEEE Transactions on Power Electronics

Journal number: 39

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2024

Published pages: 14295-14303

DOI identifier: 10.1109/tpel.2024.3441712

ISSN: 0885-8993