Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO₂-GaN-Interface

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Authors: Mirjam Henn, Christian Huber, Dick Scholten, Nando Kaminski

Journal title: IEEE Transactions on Electron Devices

Journal number: 71

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2024

Published pages: 1553-1560

DOI identifier: 10.1109/ted.2023.3347208

ISSN: 0018-9383