Correlating Interface and Border Traps With Distinctive Features of <i>C</i>–<i>V</i> Curves in Vertical Al₂O₃/GaN MOS Capacitors

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Authors: Nicolò Zagni, Manuel Fregolent, Giovanni Verzellesi, Alberto Marcuzzi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eldad Bahat Treidel, Enrico Brusaterra, Frank Brunner, Oliver Hilt, Matteo Meneghini, Paolo Pavan

Journal title: IEEE Transactions on Electron Devices

Journal number: 71

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2024

Published pages: 1561-1566

DOI identifier: 10.1109/ted.2023.3335032

ISSN: 0018-9383