Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs

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Authors: L. Casiez, C. Cardoux, P. Acosta Alba, N. Bernier, J. Richy, N. Pauc, V. Calvo, N. Coudurier, P. Rodriguez, O. Concepción, D. Buca, M. Frauenrath, J.M. Hartmann, A. Chelnokov, V. Reboud

Journal title: Materials Science in Semiconductor Processing

Journal number: 182

Journal publisher: Elsevier BV

Published year: 2024

DOI identifier: 10.1016/j.mssp.2024.108654

ISSN: 1369-8001