Modeling and Design of GeSn Avalanche Photodiodes With High Tin Content for Applications at 3.3 μm

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Authors: Lorenzo Finazzi, Raffaele Giani, Omar Concepción, Dan Buca, Vincent Reboud, Giovanni Isella, Alberto Tosi

Journal title: IEEE Journal of Selected Topics in Quantum Electronics

Journal number: 31

Journal publisher: Institute of Electrical and Electronics Engineers (IEEE)

Published year: 2024

DOI identifier: 10.1109/JSTQE.2024.3439495

ISSN: 1077-260X