Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov, Zhenxing Wang, Martin Otto, Lado Filipovic, Michael Waltl, Daniel Neumaier, Max C. Lemme, Tibor Grasser

Journal title: Nature Electronics

Journal number: 5

Journal publisher: Nature Portfolio

Published year: 2024

Published pages: 356-366

DOI identifier: 10.1038/s41928-022-00768-0

ISSN: 2520-1131