Trapping and reliability properties of Al2O3 gate dielectrics obtained with stacked ALD deposition

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Authors: M. Fregolent, M. Tomasi, C. De Santi, L. Tadmor, E. Brusaterra, E. Bahat Treidel, G. Meneghesso, E. Zanoni, M. Meneghini

Journal title: EMRS Fall Meeting 2024

Journal publisher: EMRS

Published year: 2024