SiO₂‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Mirjam Henn, Johannes Ziegler, Christian Huber, Humberto Rodriguez‐Alvarez, Nando Kaminski

Journal title: physica status solidi (a)

Journal publisher: Wiley - V C H Verlag GmbbH & Co.

Published year: 2024

DOI identifier: 10.1002/pssa.202400065

ISSN: 1862-6300