Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS₂

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Authors: Kyle T. Munson, Riccardo Torsi, Fatimah Habis, Lysander Huberich, Yu‐Chuan Lin, Yue Yuan, Ke Wang, Bruno Schuler, Yuanxi Wang, John B. Asbury, Joshua A. Robinson

Journal title: Advanced Electronic Materials

Journal publisher: Wiley

Published year: 2024

DOI identifier: 10.1002/aelm.202400403

ISSN: 2199-160X