Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors

Summary

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Siwen Zhao, Jinqiang Huang, Valentin Crépel, Zhiren Xiong, Xingguang Wu, Tongyao Zhang, Hanwen Wang, Xiangyan Han, Zhengyu Li, Chuanying Xi, Senyang Pan, Zhaosheng Wang, Guangli Kuang, Jun Luo, Qinxin Shen, Jie Yang, Rui Zhou, Kenji Watanabe, Takashi Taniguchi, Benjamin Sacépé, Jing Zhang, Ning Wang, Jianming Lu, Nicolas Regnault, Zheng Vitto Han

Journal title: Nature Electronics

Journal publisher: Springer Nature Limited

Published year: 2024

DOI identifier: 10.1038/s41928-024-01274-1

ISSN: 2520-1131