Physical modeling and design rules of analog Conductive Metal Oxide-HfO₂ ReRAM

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Authors: Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Antonio La Porta, Ludovico Carraria-Martinotti, Bert Jan Offrein, Valeria Bragaglia

Journal title: 2023 IEEE International Memory Workshop (IMW)

Journal publisher: IEEE

Published year: 2023

DOI identifier: 10.1109/imw56887.2023.10145936