Delivery of Si/SiC LDMOS and LIGBT die for reliability and radiation testing in WP4

The fabrication of Si/SiC LD-MOS and LIGBT rated at 200 and 600 V. Fabrication of each device will be a long process requiring several photolithography steps to define areas for metal deposition, oxidation, implantation and etching. It is expected the process will have to be optimised and is therefore likely to be iterative, with each device produced improving upin the last.