Analysis of Linear-Doped Si/SiC Power LDMOSFETs Based on Device Simulation

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Authors: Chunwa Chan, Philip A. Mawby, Peter M. Gammon

Journal title: IEEE Transactions on Electron Devices

Journal number: 63/6

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2016

Published pages: 2442-2448

DOI identifier: 10.1109/TED.2016.2550865

ISSN: 0018-9383