Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

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Authors: C. W. Chan, F. Li, A. Sanchez, P. A. Mawby, P. M. Gammon

Journal title: IEEE Transactions on Electron Devices

Journal number: 64/9

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2017

Published pages: 3713-3718

DOI identifier: 10.1109/TED.2017.2719898

ISSN: 0018-9383