A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices

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Authors: Jinglin Li, Aditya Shekhar, Willem D. van Driel, Guoqi Zhang

Journal title: IEEE Transactions on Electron Devices

Journal number: 71

Journal publisher: Institute of Electrical and Electronics Engineers (IEEE)

Published year: 2024

DOI identifier: 10.1109/TED.2024.3482252

ISSN: 0018-9383