Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors

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Authors: Gautham Rangasamy, Zhongyunshen Zhu, Lars-Erik Wernersson

Journal title: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Journal number: 10

Journal publisher: IEEE

Published year: 2024

Published pages: 8-12

DOI identifier: 10.1109/jxcdc.2024.3355949

ISSN: 2329-9231