Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

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Authors: Asal Kiazadeh, Henrique L. Gomes, Pedro Barquinha, Jorge Martins, Ana Rovisco, Joana V. Pinto, Rodrigo Martins, Elvira Fortunato

Journal title: Applied Physics Letters

Journal number: 109/5

Journal publisher: American Institute of Physics

Published year: 2016

Published pages: 051606

DOI identifier: 10.1063/1.4960200

ISSN: 0003-6951