Electrostatic Gating in Ge-Based Reconfigurable Field-Effect Transistors

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Authors: A. Fuchsberger, A. Verdianu, L. Wind, D. Nazzari, Enrique Prado Navarrete, C. Wilfingseder, J. Aberl, M. Brehm, J-M. Hartmann, M. Sistani, W. M. Weber

Journal title: IEEE Transactions on Electron Devices

Journal number: 72

Journal publisher: Institute of Electrical and Electronics Engineers (IEEE)

Published year: 2025

DOI identifier: 10.1109/TED.2025.3545802

ISSN: 0018-9383